Performance limits of graphene-ribbon field-effect transistors
نویسندگان
چکیده
منابع مشابه
Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures
This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...
متن کاملFabrication of SWCNT-Graphene Field-Effect Transistors
Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as...
متن کاملGraphene field-effect transistors with ferroelectric gating.
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent ba...
متن کاملEnergy dissipation in graphene field-effect transistors.
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 kW cm(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he...
متن کاملGraphene field effect transistors for bioelectronic applications
The development of the future generation of neuroprosthetic devices will require the advancement of novel solid-state sensors with a further improvement in the signal detection capability, a superior stability in biological environments, and a more suitable compatibility with living tissue. Due to the maturity of Si technology, Si-based MOSFETs have been extensively used in previous decades for...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2008
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.77.045301